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mw5ic970nbr1 MW5IC970GNBR1 1 rf device data freescale semiconductor rf ldmos wideband 2-stage power amplifiers designed for broadband commercial an d industrial applications with frequencies from 132 mhz to 960 mhz. the high gain and broadband performance of these devices make them ideal for large- signal, common- source amplifier applications in 28 volt base station equipment. these devices have a 2-stage design with off-chip matching for the input, interstage and output networks to cover the desired frequency band. ? typical performance: 800 mhz, 28 volts, i dq1 = 80 ma, i dq2 = 650 ma, p out = 70 watts pep power gain 30 db drain efficiency 48% ? capable of handling 10:1 vswr, @ 28 vdc, 850 mhz, 70 watts cw output power features ? characterized with series equivalent large-signal impedance parameters ? integrated quiescent current temperature compensation with enable/disable function ? on-chip current mirror g m reference fet for self biasing application (1) ? integrated esd protection ? 200 c capable plastic package ? rohs compliant ? in tape and reel. r1 suffix = 500 units per 44 mm, 13 inch reel. figure 1. functional block diagram figure 2. pin connections v d1 /rf out1 rf in1 v rd2 v d2 /rf out2 quiescent current temperature compensation (1) v rg2 /v gs2 v rg1 /v gs1 v rd1 (top view) gnd gnd rf in1 v d1 /rf out1 gnd v rd2 v d2/ rf out2 gnd v d1 /rf out1 gnd v rg2 /v gs2 v rg1 /v gs1 v rd1 nc rf in2 nc 2 3 4 5 6 7 8 16 15 14 13 12 9 10 11 1 note: exposed backside flag is source terminal for transistors. v d1 /rf out1 rf in2 1. refer to an1977, quiescent current thermal tracking circuit in the rf integrated circuit family and to an1987, quiescent current control for the rf integrated circuit device family . go to http://www .freescale.com/rf. select documentation/application notes - an1977 or an1987. document number: mw5ic970n rev. 3, 1/2010 freescale semiconductor technical data 800-900 mhz, 70 w,28 v rf ldmos wideband 2-st age power amplifiers case 1329-09 to-272 wb-16 plastic mw5ic970nbr1 mw5ic970nbr1 MW5IC970GNBR1 case 1329a-04 to-272 wb-16 gull plastic MW5IC970GNBR1 ? freescale semiconductor, inc., 2006, 2008, 2010. all rights reserved.
2 rf device data freescale semiconductor mw5ic970nbr1 MW5IC970GNBR1 table 1. maximum ratings rating symbol value unit drain-source voltage v dss -0.5, +65 vdc gate-source voltage v gs -0.5, +15 vdc storage temperature range t stg -65 to +150 c case operating temperature t c 150 c operating junction temperature t j 200 c table 2. thermal characteristics characteristic symbol value (1) unit thermal resistance, junction to case final application stage 1, 28 vdc, i dq = 80 ma (p out = 70 w cw) stage 2, 28 vdc, i dq = 650 ma edge application stage 1, 28 vdc, i dq = 80 ma (p out = 35 w cw) stage 2, 28 vdc, i dq = 650 ma r jc 5.2 0.8 5.3 0.8 c/w table 3. esd protection characteristics test methodology class human body model (per jesd22-a114) 1a (minimum) machine model (per eia/jesd22-a115) a (minimum) charge device model (per jesd22-c101) iv (minimum) table 4. moisture sensitivity level test methodology rating package peak temperature unit per jesd22-a113, ipc/jedec j-std-020 3 260 c table 5. electrical characteristics (t a = 25 c unless otherwise noted) characteristic symbol min typ max unit functional tests (in freescale test fixture, 50 ohm system) v dd = 28.5 vdc, i dq1 = 80 ma, i dq2 = 650 ma, p out = 70 w pep, f1 = 870.0 mhz, f2 = 870.1 mhz power gain g ps 26.5 30 34.5 db drain efficiency d 40 48 % input return loss irl -12 -10 db intermodulation distortion imd -33 -28 dbc typical 800/900 mhz performances (in freescale 800/900 mhz reference fixture, 50 ohm system) v dd = 28 vdc, i dq1 = 80 ma, i dq2 = 650 ma, 740-870 mhz, 870-960 mhz gain flatness in 30 mhz bandwidth @ p out = 70 w cw g f 2 db gain flatness in 30 mhz instantaneous bandwidth @ p out = 70 w cw g f 0.2 db delay @ p out = 70 w cw including output matching delay 4.5 ns part-to-part phase variation @ p out = 70 w cw ? 15 1. refer to an1955, thermal measurement methodology of rf power amplifiers. go to http://www.freescale.com/rf . select documentation/application notes - an1955.
mw5ic970nbr1 MW5IC970GNBR1 3 rf device data freescale semiconductor figure 3. mw5ic970nbr1(gnbr1) test circuit schematic z7 0.040 x 0.233 microstrip z8 0.450 x 0.120 microstrip z9 0.100 x 0.066 microstrip z10 1.000 x 0.040 microstrip z11 0.148 x 0.040 microstrip pcb rogers 4350b, 0.030 , r = 3.5 z1 0.485 x 0.066 microstrip z2 0.270 x 0.040 microstrip z3 0.068 x 0.020 microstrip z4 0.950 x 0.040 microstrip z5 0.131 x 0.233 microstrip z6 0.797 x 0.050 microstrip 116 2 3 4 5 6 7 8 nc 14 15 12 13 11 10 9 nc rf output c6 c7 c10 c11 z5 z6 z7 z8 c12 c13 z10 c14 z11 z9 c8 c9 r8 c18 c17 r5 r7 c15 c16 r2 r1 z3 c2 r3 r4 rf input z1 z2 c1 r6 v bias c5 z4 c3 c4 v g1r1 v g2r2 v d1 f2 v d2 f1 quiescent current temperature compensation table 6. mw5ic970nbr1(gnbr1) test circuit component designations and values part description part number manufacturer c1, c10, c11 3.9 pf chip capacitors atc600s3r9bt250t atc c2 56 pf chip capacitor atc600s560jt250t atc c3, c8, c14, c15, c17 39 pf chip capacitors grm40001c0g390j050bd murata c4, c9 10 f chip capacitors ecj4yf1h106z panasonic c5 24 pf chip capacitor atc600f240jt250t atc c6, c7 15 pf chip capacitors atc600f150jt250t atc c12 4.7 pf chip capacitor atc600f4r7bt250t atc c13 0.4 pf chip capacitor atc600f0r4bt250t atc c16, c18, c19, c20 0.015 f chip capacitors grm400x7r153j050bd murata f1 5a surface mount fuse 1ft5a little fuse f2 1a surface mount fuse 1ft1a little fuse r1, r7 681 , 1/8 w chip resistors crcw08056810fkea vishay r2, r5 4.75 k , 1/8 w chip resistors crcw08054751fkea vishay r3, r4, r8 1.21 k , 1/8 w chip resistors crcw08051211fkea vishay r6 267 , 1/8 w chip resistor crcw08052670fkea vishay
4 rf device data freescale semiconductor mw5ic970nbr1 MW5IC970GNBR1 c r6 mw5ic970 rev. 1 v g2 v g1 r8 r7 r4 r3 r1 r5 r2 c18 c17 c16 c15 c2 c5 c1 c3 c4 v d1 f2 v d2 f1 c9 c8 c7 c6 c11 c10 c12 c13 c14 figure 4. mw5ic970nbr1(gnbr1) test circuit component layout
mw5ic970nbr1 MW5IC970GNBR1 5 rf device data freescale semiconductor typical characteristics 960 -40 60 800 -40 60 irl g ps imd f, frequency (mhz) v dd = 28.5 vdc, p out = 35 w (avg.) i dq1 = 80 ma, i dq2 = 650 ma 100 khz tone spacing 40 40 20 20 00 -2 0 -20 840 880 920 figure 5. two-t one wideband performance @ p out = 35 watts (avg.) pae pae , power added efficiency (%) g ps , power gain (db) irl, input return loss (db) imd, intermodulation distortion (dbc) p out , output power (watts) pep 100 27 32 1 i dq2 = 975 ma v dd = 28.5 vdc, i dq1 = 80 ma f1 = 870 mhz, f2 = 870.1 mhz two-tone measurements 100 khz tone spacing 31 30 28 10 200 figure 6. two-t one power gain versus output power g ps , power gain (db) 300 -70 -1 0 1 7th order v dd = 28.5 vdc i dq1 = 80 ma, i dq2 = 650 ma f1 = 870 mhz, f2 = 870.1 mhz two-tone measurements 100 khz tone spacing 5th order 3rd order 10 -2 0 -3 0 -4 0 -5 0 -6 0 p out , output power (watts) pep figure 7. intermodulation distortion products versus output power imd, intermodulation distortion (dbc) 10 -55 -2 0 0.1 7th order two-t one spacing (mhz) 5th order 3rd order -2 5 -3 0 -3 5 -4 0 -4 5 -5 0 1 200 figure 8. intermodulation distortion products versus tone spacing imd, intermodulation distortion (dbc) 1000 20 34 0.1 0 70 v dd = 28.5 vdc, i dq1 = 80 ma i dq2 = 650 ma, f = 870 mhz t c = 25 c 85 c -30 c 25 c 85 c 10 1 32 30 28 26 24 22 60 50 40 30 20 10 p out , output power (watts) cw figure 9. power gain and power added efficiency versus cw output power g ps , power gain (db) pae , power added efficiency ( % ) g ps 820 860 900 940 29 100 100 812 ma 650 ma 488 ma 325 ma v dd = 28.5 vdc, p out = 35 w (pep) i dq1 = 80 ma, i dq2 = 650 ma two-tone measurements (f1 + f2)/2 = center frequency of 870 mhz 100 pae -30 c
6 rf device data freescale semiconductor mw5ic970nbr1 MW5IC970GNBR1 typical characteristics p out , output power (watts) cw figure 10. power gain versus output power 16 v i dq1 = 80 ma i dq2 = 650 ma f = 870 mhz v dd = 12 v 100 27 32 080 31 30 29 28 20 40 60 g ps , power gain (db) 120 140 20 v 24 v 28.5 v 32 v
mw5ic970nbr1 MW5IC970GNBR1 7 rf device data freescale semiconductor package dimensions
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mw5ic970nbr1 MW5IC970GNBR1 9 rf device data freescale semiconductor
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mw5ic970nbr1 MW5IC970GNBR1 13 rf device data freescale semiconductor product documentation refer to the following documents to aid your design process. application notes ? an1907: solder reflow attach method for high power rf devices in plastic packages ? an1955: thermal measurement methodology of rf power amplifiers ? an1977: quiescent current thermal tracking circuit in the rf integrated circuit family ? an1987: quiescent current control for the rf integrated circuit device family ? an3263: bolt down mounting method for high power rf transistors and rfics in over-molded plastic packages ? an3789: clamping of high power rf transistors and rfics in over-molded plastic packages engineering bulletins ? eb212: using data sheet impedances for rf ldmos devices revision history the following table summarizes revisions to this document. revision date description 2 apr. 2008 ? document number changed from mw5ic970nbr1 to mw5ic970n with the addition of the MW5IC970GNBR1 part number. revision history sequencing maintained from first release of data sheet, p. 1 ? added case operating temperature limit to the maximum ratings table and set limit to 150 c, p. 2 ? updated part numbers in table 6, component designations and values, to rohs compliant part numbers, p. 3 ? replaced case outline 1329-09, issue l, with 1329-09, issue m, p. 1, 7-9. added pin numbers 1 through 17. ? added case outline 1329a-04, issue f, p. 1, 10-12 ? added product documentation and revision history, p. 13 3 jan. 2010 ? changed storage temperature range in max ratings table from -65 to +200 to -65 to +150 for standardization across products, p. 2
14 rf device data freescale semiconductor mw5ic970nbr1 MW5IC970GNBR1 information in this document is provided solely to enable system and software implementers to use freescale semiconductor products. there are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document. freescale semiconductor reserves the right to make changes without further notice to any products herein. freescale semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does freescale semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. typical parameters that may be provided in freescale semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operating parameters, including typicals, must be validated for each customer application by customer's technical experts. freescale semiconductor does not convey any license under its patent rights nor the rights of others. freescale semiconductor products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the freescale semiconductor product could create a situation where personal injury or death may occur. should buyer purchase or use freescale semiconductor products for any such unintended or unauthorized application, buyer shall indemnify and hold freescale semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that freescale semiconductor was negligent regarding the design or manufacture of the part. freescale and the freescale logo are trademarks of freescale semiconductor, inc. all other product or service names are the property of their respective owners. ? freescale semiconductor, inc. 2006, 2008, 2010. all rights reserved. how to reach us: home page: www.freescale.com web support: http://www.freescale.com/support usa/europe or locations not listed: freescale semiconductor, inc. technical information center, el516 2100 east elliot road tempe, arizona 85284 1-800-521-6274 or +1-480-768-2130 www.freescale.com/support europe, middle east, and africa: freescale halbleiter deutschland gmbh technical information center schatzbogen 7 81829 muenchen, germany +44 1296 380 456 (english) +46 8 52200080 (english) +49 89 92103 559 (german) +33 1 69 35 48 48 (french) www.freescale.com/support japan: freescale semiconductor japan ltd. headquarters arco tower 15f 1-8-1, shimo-meguro, meguro-ku, tokyo 153-0064 japan 0120 191014 or +81 3 5437 9125 support.japan@freescale.com asia/pacific: freescale semiconductor china ltd. exchange building 23f no. 118 jianguo road chaoyang district beijing 100022 china +86 10 5879 8000 support.asia@freescale.com for literature requests only: freescale semiconductor literature distribution center 1-800-441-2447 or +1-303-675-2140 fax: +1-303-675-2150 ldcforfreescalesemiconductor@hibbertgroup.com document number: mw5ic970n rev. 3, 1/2010

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